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Merck

339113

Tantalum(V) ethoxide

99.98% trace metals basis

Synonym(s):

Pentaethoxytantalum, Pentaethyl tantalate, Tantalum ethylate, Tantalum pentaethoxide, Tantalum(V) ethoxide

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About This Item

Linear Formula:
Ta(OC2H5)5
CAS Number:
6074-84-6
Molecular Weight:
406.25
UNSPSC Code:
12352103
NACRES:
NA.23
PubChem Substance ID:
24860612
MDL number:
MFCD00049785
Beilstein/REAXYS Number:
3678999

Product Name

Tantalum(V) ethoxide, 99.98% trace metals basis

InChI

1S/5C2H5O.Ta/c5*1-2-3;/h5*2H2,1H3;/q5*-1;+5

SMILES string

CCO[Ta](OCC)(OCC)(OCC)OCC

InChI key

HSXKFDGTKKAEHL-UHFFFAOYSA-N

assay

99.98% trace metals basis

form

liquid

reaction suitability

core: tantalum
reagent type: catalyst

impurities

<2 wt. % toluene

refractive index

n20/D 1.487 (lit.)

bp

155 °C/0.01 mmHg (lit.)

mp

21 °C (lit.)

density

1.566 g/mL at 25 °C (lit.)

Quality Level

100

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Application

Tantalum ethoxide is used as a precursor
  • To synthesize modified tantalum-alkoxo complexes, enabling the fabrication of Ta₂O₅ thin films with tunable optical properties.
  • In the sol–gel synthesis of tantalum oxide nanoparticles, which, when doped with rare earth elements, form wide band gap semiconductors showing both stokes and anti-stokes visible luminescence.
  • To synthesize hollow TaOx nanoshells in the formation of Bi₂S₃@TaOx-HA core–shell nanoparticles, which serve as multifunctional theranostic agents for CT/photoacoustic imaging and enhanced photothermal cancer therapy.

Features and Benefits

  • 99.98% purity on a trace metals basis ensures minimal contamination for critical applications, resulting in superior quality materials.
  • Low metal impurities (< 250.0 ppm) enhance sol-gel formation for the synthesis of nanoparticles.

General description

Tantalum(V) ethoxide is primarily used to produce tantalum oxide thin films for applications in optics, semiconductors, and electrochromic devices. These films possess high refractive index and excellent electrical insulation properties. Additionally, when tantalum is alloyed with other metals, it gains enhanced strength, ductility, and corrosion resistance, making it highly suitable for applications in electronics and advanced materials. Our 99.98% trace metals basis of Tantalum(V) ethoxide is suitable for the synthesis of  tantalum oxide by chemical vapor deposition (CVD).

pictograms

Flame
GHS02

signalword

Warning

hcodes

H226

Hazard Classifications

Flam. Liq. 3

Storage Class

3 - Flammable liquids

wgk

WGK 1

flash_point_f

84.2 °F - closed cup

flash_point_c

29 °C - closed cup

ppe

Faceshields, Gloves, Goggles, type ABEK (EN14387) respirator filter

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Certificates of Analysis (COA)

Lot/Batch Number
MKCZ7158
MKCZ5740
MKCV9388
MKCV2835
MKCT1155

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The Electrosynthesis of Tantalum Ethoxide
Yang H, et al.
Electrochemistry, 82(9), 743-748 (2014)
Leakage currents in amorphous Ta 2 O 5 thin films
Chiu F, et al.
Journal of Applied Physics, 81(10), 6911-6915 (1997)
Controlling the synthesis of TaC nanopowders by injecting liquid precursor into RF induction plasma
Ishigaki T, et al.
Science and Technology of Advanced Materials, 6(2), 111-111 (2005)
Ultrathin tantalum oxide capacitor dielectric layers fabricated using rapid thermal nitridation prior to low pressure chemical vapor deposition
Kamiyama S, et al.
Journal of the Electrochemical Society, 140(6), 1617-1625 (1993)
Kuo-Shyan Lin et al.
Cancer research, 75(2), 387-393 (2014-12-10)
The bradykinin receptor B1R is overexpressed in many human cancers where it might be used as a general target for cancer imaging. In this study, we evaluated the feasibility of using radiolabeled kallidin derivatives to visualize B1R expression in a
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