263265
Gallium
99.99% trace metals basis
Sinónimos:
Elemental gallium
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Fórmula lineal:
Ga
Número CAS:
Peso molecular:
69.72
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12141715
MDL number:
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99.99% trace metals basis
form
(chips, chunks), (metallic liquid or solid (ambient temp dependent))
reaction suitability
core: gallium
resistivity
25.795 μΩ-cm, 30°C
bp
2403 °C (lit.)
mp
29.8 °C (lit.)
density
5.904 g/mL at 25 °C (lit.)
storage temp.
2-8°C
SMILES string
[Ga]
InChI
1S/Ga
InChI key
GYHNNYVSQQEPJS-UHFFFAOYSA-N
General description
Gallium is a rareearth element that is widely used in smart electronic devices and integratedcircuits as it provides the advantages of low energy consumption and highcomputational speeds. Due to its high boiling point and low melting point, itexhibits a wide temperature range in the liquid state. It tends to formsulfate, chloride, and phosphate complexes due to its high charge. Thecompounds of gallium find applications in advanced semiconductors and LEDchips.
Application
Gallium can be used as a precursor to synthesize:
- Gallium nitride and other Ga-based compounds for optoelectronic applications.
- Sulfur/gallium hybrid cathode material for lithium-sulfur batteries. The surface of Ga metal promotes the redox reaction of lithium polysulfides due to its electrocatalytic effect.
- Ga-based liquid alloys for the fabrication offlexible electronic devices.
Features and Benefits
- Excellent conductor of heat and electricity
- Wide temperature range in the liquid state
- Lowvapor pressure at high temperature
signalword
Warning
hcodes
Hazard Classifications
Acute Tox. 4 Oral - Aquatic Chronic 3 - Met. Corr. 1
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Eyeshields, Faceshields, Gloves, type P3 (EN 143) respirator cartridges
Clase de almacenamiento
11 - Combustible Solids
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Previously unreported σ-phases in the ternary niobium-based systems Nb-X-Ga for X = Ru, Rh, Pd, Ir, Pt, Au, and Nb-X-Al for X = Ir, and Pt are presented, prepared by arc-melting followed by annealing at 1000 °C for 1 week.
C Tessarek et al.
Optics express, 21(3), 2733-2740 (2013-03-14)
Self-assembled GaN rods were grown on sapphire by metal-organic vapor phase epitaxy using a simple two-step method that relies first on a nitridation step followed by GaN epitaxy. The mask-free rods formed without any additional catalyst. Most of the vertically