262722
Niobium
powder, <45 μm, 99.8% trace metals basis
Synonym(s):
Columbium
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About This Item
Empirical Formula (Hill Notation):
Nb
CAS Number:
Molecular Weight:
92.91
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12141730
EC Number:
231-113-5
MDL number:
InChI key
GUCVJGMIXFAOAE-UHFFFAOYSA-N
InChI
1S/Nb
SMILES string
[Nb]
assay
99.8% trace metals basis
form
powder
resistivity
13-16 μΩ-cm, 20°C
particle size
<45 μm
bp
4742 °C (lit.)
mp
2468 °C (lit.)
density
8.57 g/mL at 25 °C (lit.)
Quality Level
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signalword
Danger
hcodes
Hazard Classifications
Flam. Sol. 1
Storage Class
4.1B - Flammable solid hazardous materials
wgk
nwg
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Eyeshields, Faceshields, Gloves, type N95 (US)
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Christos D Malliakas et al.
Journal of the American Chemical Society, 135(5), 1719-1722 (2013-01-23)
2H-NbSe(2) is a canonical Charge-Density-Wave (CDW) layered material the structural details of which remained elusive. We report the detailed structure of 2H-NbSe(2) below the CDW transition using a (3 + 2)-dimensional crystallographic approach on single crystal X-ray diffraction data collected
M I Tsindlekht et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(8), 085701-085701 (2013-01-31)
We report results of measurements of the ac conductivity of a Nb superconducting thin film in a swept dc magnetic field. In the mixed state the swept dc field creates vortices at the film surface which pass through the film
Tzyy-Jiann Wang et al.
Optics express, 20(27), 28119-28124 (2012-12-25)
We report ultra-smooth LiNbO(3) microdisk resonators fabricated by selective ion implantation, chemical etching, and thermal treatment. The undercut microdisk structure is produced by chemically etching the buried lattice damage layer formed by selective ion implantation. By thermal treatment, surface tension
Jason S Pelc et al.
Optics express, 20(25), 27510-27519 (2012-12-25)
Long-distance quantum communication networks require appropriate interfaces between matter qubit-based nodes and low-loss photonic quantum channels. We implement a downconversion quantum interface, where the single photons emitted from a semiconductor quantum dot at 910 nm are downconverted to 1560 nm
Huaxiang Yi et al.
Optics express, 20(25), 27562-27568 (2012-12-25)
We demonstrate error-free 80km transmission by a silicon carrier-depletion Mach-Zehnder modulator at 10Gbps and the power penalty is as low as 1.15dB. The devices were evaluated through the bit-error-rate characterizations under the system-level analysis. The silicon Mach-Zehnder modulator was also
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