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87921

Tetramethylsilane

≥99.0% (GC)

Synonym(s):

TMS

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About This Item

Linear Formula:
Si(CH3)4
CAS Number:
75-76-3
Molecular Weight:
88.22
UNSPSC Code:
12352103
NACRES:
NA.22
PubChem Substance ID:
57653278
EC Number:
200-899-1
Beilstein/REAXYS Number:
1696908
MDL number:
MFCD00008274
Assay:
≥99.0% (GC)
Technique(s):
GC/GC: suitable
Bp:
26-28 °C (lit.)
Vapor pressure:
11.66 psi ( 20 °C)
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vapor pressure

11.66 psi ( 20 °C)

Quality Level

100

assay

≥99.0% (GC)

form

liquid

autoignition temp.

842 °F

technique(s)

GC/GC: suitable

refractive index

n20/D 1.358 (lit.), n20/D 1.359

bp

26-28 °C (lit.)

mp

−99 °C (lit.)

density

0.648 g/mL at 25 °C (lit.)

storage temp.

2-8°C

SMILES string

C[Si](C)(C)C

InChI

1S/C4H12Si/c1-5(2,3)4/h1-4H3

InChI key

CZDYPVPMEAXLPK-UHFFFAOYSA-N

Application

Tetramethylsilane can be used as a silicon precursor for the synthesis of silicon doped diamond-like carbon (DLC-Si) films and silicon carbide (SiC) bulk crystals. It can also be used as a hydrocarbon substrate to study intermolecular C-H activation chemistry.

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pictograms

Flame
GHS02

signalword

Danger

hcodes

H224

Hazard Classifications

Flam. Liq. 1

Storage Class

3 - Flammable liquids

wgk

WGK 3

flash_point_f

-16.6 °F - closed cup

flash_point_c

-27 °C - closed cup

ppe

Eyeshields, Faceshields, Gloves

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Certificates of Analysis (COA)

Lot/Batch Number
SDBB5877
SDBB3944
SDBB2599
STBL4222
STBL3881

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The effects of Si incorporation on the electrochemical and nanomechanical properties of DLC thin films.
Papakonstantinou P, et al.
Diamond and Related Materials, 11(3-6), 1074-1080 (2002)
High-temperature chemical vapor deposition for SiC single crystal bulk growth using tetramethylsilane as a precursor.
Nam DH, et al.
Crystal Growth & Design, 14(11), 5569-5574 (2014)
Intermolecular C- H Activation of Hydrocarbons by Tungsten Alkylidene Complexes: An Experimental and Computational Mechanistic Study.
Adams CS, et al.
Organometallics, 20(23), 4939-4955 (2001)
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