203343
Germanium
chips, 99.999% trace metals basis
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About This Item
Empirical Formula (Hill Notation):
Ge
CAS Number:
Molecular Weight:
72.64
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12141716
EC Number:
231-164-3
MDL number:
Product Name
Germanium, chips, 99.999% trace metals basis
InChI key
GNPVGFCGXDBREM-UHFFFAOYSA-N
InChI
1S/Ge
SMILES string
[Ge]
assay
99.999% trace metals basis
form
chips
resistivity
53 Ω-cm, 20°C
particle size
≥3 mm
bp
2830 °C (lit.)
mp
937 °C (lit.)
density
5.35 g/mL at 25 °C (lit.)
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Storage Class
13 - Non Combustible Solids
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
dust mask type N95 (US), Eyeshields, Gloves
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Jonas Schartner et al.
Journal of the American Chemical Society, 135(10), 4079-4087 (2013-02-19)
Attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy allows a detailed analysis of surface attached molecules, including their secondary structure, orientation, and interaction with small molecules in the case of proteins. Here, we present a universal immobilization technique on germanium
Minxian Wu et al.
Physical chemistry chemical physics : PCCP, 15(14), 4955-4964 (2013-02-27)
The electrodeposition of germanium from the ionic liquid 1-butyl-1-methylpyrrolidinium dicyanamide ([BMP][DCA]) and a mixture of [BMP][DCA] and 1-butyl-1-methylpyrrolidinium chloride ([BMP]Cl) was studied using cyclic voltammetry and using an electrochemical quartz crystal microbalance (EQCM). [GeCl4(BuIm)2] (BuIm = N-butylimidazole) was used as
Jin Liu et al.
Dalton transactions (Cambridge, England : 2003), 42(14), 5092-5099 (2013-02-13)
In this study, Zn2GeO4 hollow spheres were successfully fabricated by a template-engaged approach using zinc hydroxide carbonate (Zn4CO3(OH)6·H2O, ZHC) spheres as the template. During the hydrothermal process, Zn(2+) dissolved from the surface of the ZHC spheres could rapidly react with
Michael Oehme et al.
Optics express, 21(2), 2206-2211 (2013-02-08)
In this paper we investigate the influence of n-type doping in Ge light emitting diodes on Si substrates on the room temperature emission spectrum. The layer structures are grown with a special low temperature molecular beam epitaxy process resulting in
Lu Dai et al.
Nanoscale, 5(3), 971-976 (2012-12-15)
The controllable fabrication of self-scrolling SiGe/Si/Cr helical nanoribbons on Si(111) substrates is investigated. The initial lateral etching profile of the Si(111) substrates shows a 2-fold rotational symmetry using 4% ammonia solution, which provides guidance for initial scrolling of one-end-fixed nanoribbons
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