357227
Molybdenum
foil, thickness 0.025 mm, ≥99.9% trace metals basis
Synonym(s):
Molybdenum element
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About This Item
Empirical Formula (Hill Notation):
Mo
CAS Number:
Molecular Weight:
95.94
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12141727
MDL number:
InChI
1S/Mo
SMILES string
[Mo]
InChI key
ZOKXTWBITQBERF-UHFFFAOYSA-N
assay
≥99.9% trace metals basis
form
foil
resistivity
5.0 μΩ-cm, 20°C
thickness
0.025 mm
bp
4612 °C (lit.)
mp
2617 °C (lit.)
density
10.3 g/mL at 25 °C (lit.)
Quality Level
Related Categories
General description
Mo foils are lightweight and flexible, hence desirable for space applications. Mo foil may be used as a substrate for the fabrication of CdS-CdTe solar cells. Interaction of selenium, arsenic hydrides, stibine and bismuthine with Mo foil was investigated by atomic absorption spectroscopy. Mo foils may be used to generate metal diffusion bonding in silicon carbide/silicon carbide (SiC/SiC) joints.
Preparation Note
150 × 150 mm (approximately 5.8 g)
Storage Class
11 - Combustible Solids
wgk
nwg
flash_point_f
Not applicable
flash_point_c
Not applicable
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Trapping of hydride forming elements within miniature electrothermal devices. Part 3. Investigation of collection of antimony and bismuth on a
molybdenum foil strip following hydride generation
Krejci P, et al.
Spectrochimica Acta. Part B: Atomic Spectroscopy, 61, 444-449 (2006)
Trapping of hydride forming elements within miniature electrothermal devices: part I. investigation of collection of arsenic and selenium hydrides on a molybdenum foil strip
Docekal B and Selecka A
Spectrochimica Acta. Part B: Atomic Spectroscopy, 59(4), 487-495 (2004)
Flexural Strength and Shear Strength of Silicon Carbide to Silicon Carbide Joints Fabricated by a Molybdenum Diffusion Bonding Technique.
Cockeram BV, et al.
Journal of the American Ceramic Society. American Ceramic Society, 88(7), 1892-1899 (2006)
Design issues in the fabrication of CdS?CdTe solar cells on molybdenum foil substrates.
Singh VP and McClure JC
Solar Energy Materials and Solar Cells, 76, 363-385 (2003)
Measurement of mobility in dual-gated MoS₂ transistors.
Michael S Fuhrer et al.
Nature nanotechnology, 8(3), 146-147 (2013-03-06)
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