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Merck

266418

Tellurium

powder, −200 mesh, 99.8% trace metals basis

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About This Item

Empirical Formula (Hill Notation):
Te
CAS Number:
Molecular Weight:
127.60
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12141913
EC Number:
236-813-4
MDL number:
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assay

99.8% trace metals basis

form

powder

composition

Te

resistivity

5.8-33 μΩ-cm, 20°C

particle size

−200 mesh

bp

990 °C (lit.)

mp

450 °C (lit.)

density

6.24 g/mL at 25 °C (lit.)

SMILES string

[Te]

InChI

1S/Te

InChI key

PORWMNRCUJJQNO-UHFFFAOYSA-N

General description

Tellurium is anon-radioactive and heaviest member of the chalcogen family. It has a widerange of oxidation states, from -2 to +6. It is widely used in the fields ofmetallurgy and electronics.

Application

Tellurium can be used as a precursor to prepare:
  • Tellurium-based nanomaterials for semiconductor application, such as CdTe nanoparticles via solvothermal synthesis.
  • Quantum dot solutions for fluorometric determination of bioactive compounds.
  • Thermoelectricmaterials, such as Cu4Mn2Te4 by the melting-quenching-SPS method.
Tellurium, in combination with potassium hydroxide, mediates the quantitative pinacolization of aromatic carbonyl compounds.


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pictograms

Health hazardExclamation mark

signalword

Danger

Hazard Classifications

Acute Tox. 4 Inhalation - Aquatic Chronic 4 - Lact. - Repr. 1B - Skin Sens. 1B

Storage Class

6.1D - Non-combustible acute toxic Cat.3 / toxic hazardous materials or hazardous materials causing chronic effects

wgk

WGK 2

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Faceshields, Gloves, type P2 (EN 143) respirator cartridges


Regulatory Listings

Regulatory Listings are mainly provided for chemical products. Only limited information can be provided here for non-chemical products. No entry means none of the components are listed. It is the user’s obligation to ensure the safe and legal use of the product.

13494-80-9

CAS No.


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Khan, R.H. et al.
Synthetic Communications, 27, 2193-2193 (1997)
Guizhong Wang et al.
Optics express, 21(4), 4703-4708 (2013-03-14)
The octave-spanning spectrum was generated in a tellurite glass based microstructured fiber pumped by a 528 MHz repetition rate Yb:fiber ring laser without amplification. The laser achieved 40% output optical-to-optical efficiency with the output power of 410 mW. By adjusting
Zhe Liu et al.
Optics express, 21(6), 7799-7810 (2013-04-03)
ZnTe is an important p-type semiconductor with great applications as field-effect transistors and photodetectors. In this paper, individual ZnTe nanowires based field-effect transistors was fabricated, showing evident p-type conductivity with an effect mobility of 11.3 cm(2)/Vs. Single ZnTe nanowire based