647705
Silicon
wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm
Synonym(s):
Silicon element
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About This Item
Linear Formula:
Si
CAS Number:
Molecular Weight:
28.09
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352300
MDL number:
Quality Level
form
crystalline (cubic (a = 5.4037)), wafer
contains
boron as dopant
greener alternative product characteristics
Design for Energy Efficiency
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diam. × thickness
2 in. × 0.3 mm
bp
2355 °C (lit.)
mp
1410 °C (lit.)
density
2.33 g/mL at 25 °C (lit.)
greener alternative category
semiconductor properties
<111>, P-type
SMILES string
[Si]
InChI
1S/Si
InChI key
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
General description
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ωcm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″
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Storage Class
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Related Content
Technical Bulletins
Chengyong Li et al.
Journal of nanoscience and nanotechnology, 13(3), 2272-2275 (2013-06-13)
Mesoporous Si-C-O fibers were fabricated by air activation of a kind of carbon-rich SiC-C fibers at 600 degrees C. The SiC-C fibers were prepared from the hybrid precursor of polycarbosilane and pitch through melt-spinning, air curing and pyrolysis in nitrogen.
Bo-Soon Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3622-3626 (2013-07-19)
A subwavelength structure (SWS) was formed via a simple chemical wet etching using a gold (Au) catalyst. Single nano-sized Au particles were fabricated by metallic self-aggregation. The deposition and thermal annealing of the thin metallic film were carried out. Thermal
Pil Ju Ko et al.
Journal of nanoscience and nanotechnology, 13(4), 2451-2460 (2013-06-15)
The physical properties of porous materials are being exploited for a wide range of applications including optical biosensors, waveguides, gas sensors, micro capacitors, and solar cells. Here, we review the fast, easy and inexpensive electrochemical anodization based fabrication porous silicon