553468
Tris(tert-butoxy)silanol
99.999%
Sinónimos:
TBS
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About This Item
Fórmula lineal:
((CH3)3CO)3SiOH
Número CAS:
Peso molecular:
264.43
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352103
MDL number:
Nombre del producto
Tris(tert-butoxy)silanol, 99.999%
InChI
1S/C12H28O4Si/c1-10(2,3)14-17(13,15-11(4,5)6)16-12(7,8)9/h13H,1-9H3
SMILES string
CC(C)(C)O[Si](O)(OC(C)(C)C)OC(C)(C)C
InChI key
HLDBBQREZCVBMA-UHFFFAOYSA-N
assay
99.999%
form
solid
bp
205-210 °C (lit.)
mp
63-65 °C (lit.)
Quality Level
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Categorías relacionadas
Application
Tris(tert-alkoxy)silanols reacts with tetrakis(dimethylamino)-hafnium vapor(Hf(N(CH3)2)4) for vapor phase deposition of hafnium silicate glass films. Tris(tert-butoxy)silanol is used for atomic layer deposition (ALD) of highly conformal layers of amorphous silicon dioxide and aluminum oxide nanolaminates.
General description
Tris(tert-butoxy)silanol can react with various metal alkyl amides to act as precursors for vapor deposition metal silicates. It also acts as a suitable precursor for deposition of silica.
Clase de almacenamiento
11 - Combustible Solids
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Eyeshields, Gloves, type N95 (US)
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Rapid vapor deposition of highly conformal silica nanolaminates.
Hausmann D, et al.
Science, 298(5592), 402-406 null
Rapid SiO2 Atomic Layer Deposition Using Tris(tert-pentoxy)silanol.
Burton B, et al.
Chemistry of Materials, 20, 7031-7043 (2008)
Vapor deposition of metal oxides and silicates: Possible gate insulators for future microelectronics.
Gordon G, et al.
Chemistry of Materials, 13(8), 2463-2464 (2001)
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