203424
Indium(III) oxide
99.998% trace metals basis
Synonym(s):
Indium oxide, Diindium trioxide, Indium sesquioxide
Sign In to View Organizational & Contract Pricing.
Select a Size
Change View
About This Item
Empirical Formula (Hill Notation):
In2O3
CAS Number:
Molecular Weight:
277.63
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352303
EC Number:
215-193-9
MDL number:
vapor pressure
<0.01 mmHg ( 25 °C)
assay
99.998% trace metals basis
form
powder
composition
In₂O₃
reaction suitability
reagent type: catalyst
core: indium
density
7.18 g/mL at 25 °C (lit.)
application(s)
battery manufacturing
SMILES string
O=[In]O[In]=O
InChI
1S/2In.3O
InChI key
SHTGRZNPWBITMM-UHFFFAOYSA-N
Application
- Synthesis and Characterization: The development of gold nanoclusters on the surface of tin and indium oxide films, synthesizing new materials for advanced applications (Korotcenkov et al., 2014).
- Photocatalysis: Using nitrogen/sulfur-codoped carbon-coated indium oxide nanoparticles as excellent photocatalysts, providing insights into environmental and energy applications (Sun et al., 2019).
Still not finding the right product?
Explore all of our products under Indium(III) oxide
Storage Class
11 - Combustible Solids
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
dust mask type N95 (US), Eyeshields, Gloves
Choose from one of the most recent versions:
Already Own This Product?
Find documentation for the products that you have recently purchased in the Document Library.
Jiefu Yin et al.
Inorganic chemistry, 51(12), 6529-6536 (2012-06-06)
We report here for the first time the hollow, metastable, single-crystal, rhombohedral In(2)O(3) (rh-In(2)O(3)) nanocrystals synthesized by annealing solvothermally prepared InOOH solid nanocrystals under ambient pressure at 400 °C, through a mechanism of the Kirkendall effect, in which pore formation
Huimeng Wu et al.
Journal of the American Chemical Society, 133(36), 14327-14337 (2011-08-11)
This Article reports a mechanistic study on the formation of colloidal UO(2)/In(2)O(3) and FePt/In(2)O(3) heterodimer nanocrystals. These dimer nanocrystals were synthesized via the growth of In(2)O(3) as the epitaxial material onto the seed nanocrystals of UO(2) or FePt. The resulting
Di Chen et al.
Nanoscale, 4(10), 3001-3012 (2012-04-13)
With the features of high mobility, a high electric on/off ratio and excellent transparency, metal oxide nanowires are excellent candidates for transparent thin-film transistors, which is one of the key technologies to realize transparent electronics. This article provides a comprehensive