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About This Item
Linear Formula:
Al[OCH(CH3)2]3
CAS Number:
Molecular Weight:
204.24
UNSPSC Code:
12352103
NACRES:
NA.23
PubChem Substance ID:
EC Number:
209-090-8
Beilstein/REAXYS Number:
3910275
MDL number:
InChI key
SMZOGRDCAXLAAR-UHFFFAOYSA-N
InChI
1S/3C3H7O.Al/c3*1-3(2)4;/h3*3H,1-2H3;/q3*-1;+3
SMILES string
CC(C)O[Al](OC(C)C)OC(C)C
assay
≥99.99% trace metals basis
form
powder and chunks, solid
reaction suitability
core: aluminum, reagent type: catalyst
Quality Level
density
1.035 g/mL at 25 °C (lit.)
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General description
Aluminum isopropoxideis a metal-organic compound that consists of an aluminum atom bonded with threeisopropoxide ligands. It is used as a precursor for the synthesis of high-surfacearea alumina and other aluminum-containing materials. In addition, it is usedto prepare metalorganic chemical precursors for the growth of thinfilms and coatings.
Application
Aluminum isopropoxide can be used as:
- Sol-gel precursor to synthesize ZnAl2O4 powders for transparent ceramics.
- Precursor material for the fabrication of nanosized SAPO-34 zeolites with a 4-fold increase in catalytic lifetime and significantly increased selectivity.
- A starting material to prepare long-persistent luminescence materials for display devices and bioimaging.
- Coating material to fabricate electrodes for lithium-ion batteries to enhance cycling stability and performance.
- A catalyst for alkylation of resorcinol with camphene.
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Sol-gel synthesis and characterization of ZnAl2O4 powders for transparent ceramics
A.V.Belyaev, et al.
Ceramics International, 45, 4835-4839 (2019)
Seeding induced nano-sized hierarchical SAPO-34 zeolites: cost-effective synthesis and superior MTO performance
Qiming Sun, et al.
Journal of Material Chemistry A, 4, 14978-14982 (2016)
Chandradass, J.; et al.
Materials Science & Engineering. A, Structural Materials : Properties, Microstructure and Processing, 408 (1-2), 165-168 (2005)
Chandradass, J.; et al.
Journal of Materials Processing Technology, 173 (3), 275-280 (2006)
SrAl2O4: Eu2+, Dy3+ phosphors derived from a new sol?gel route
Yiqing Lu, et al.},
Microelectronics Journal, 35, 379-382 (2004)
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