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Merck

69860

Molybdenum disulfide

greener alternative

powder

Synonym(s):

MoS2 powder, Moly disulfide, Molybdenum disulphide, Molybdenum sulfide, Molybdenum(IV) sulfide, Molybdenum disulfide

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About This Item

Empirical Formula (Hill Notation):
MoS2
CAS Number:
1317-33-5
Molecular Weight:
160.07
NACRES:
NA.23
PubChem Substance ID:
57652216
UNSPSC Code:
12352300
EC Number:
215-263-9
MDL number:
MFCD00003470

Key Documents

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Product Name

Molybdenum(IV) sulfide, powder

InChI key

CWQXQMHSOZUFJS-UHFFFAOYSA-N

InChI

1S/Mo.2S

SMILES string

S=[Mo]=S

form

powder

greener alternative product characteristics

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particle size

~6 μm (max. 40 μm)

density

5.06 g/mL at 25 °C (lit.)

greener alternative category

Enabling

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General description

Molybdenum disulfide is a two dimensional layered material. Monolayers of transition metal dichalcogenides (TMDs)exhibit photoconductivity. The layers of the TMD can be mechanically or chemicaly exfoliated to form nanosheets.
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Application

Acidic solution of MoS2 particles was used to catalyze hydrogen evolution at a water 1,2-dichloroethane interface. MoS2 was dispersed in N-methyl-pyrrolidone to form exfoliated MoS2 flakes of various sizes. MoS2 ink was used for inkjet printer. MoS2 may find potential applications in electronics and optoelectronics.

Storage Class

11 - Combustible Solids

wgk

nwg

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Gloves, type N95 (US)

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Certificates of Analysis (COA)

Lot/Batch Number
WXBF7922V
WXBF7123V
WXBF5271V
WXBF4209V
WXBF3194V

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Preparation of high concentration dispersions of exfoliated MoS2 with increased flake size
O?Neill A, et al.
Chemistry of Materials, 24(12), 2414- 2421 (2012)
Hydrogen evolution at polarised liquid/liquid interfaces catalyzed by molybdenum disulfide.
Hatay I, et al.
Energy & Environmental Science, 4(10), 4246-4251 (2011)
A Castellanos-Gomez et al.
Nano letters, 12(6), 3187-3192 (2012-05-31)
Single-layer MoS(2) is an attractive semiconducting analogue of graphene that combines high mechanical flexibility with a large direct bandgap of 1.8 eV. On the other hand, bulk MoS(2) is an indirect bandgap semiconductor similar to silicon, with a gap of
Woo Jong Yu et al.
Nature materials, 12(3), 246-252 (2012-12-18)
Graphene has attracted considerable interest for future electronics, but the absence of a bandgap limits its direct applicability in transistors and logic devices. Recently, other layered materials such as molybdenum disulphide (MoS(2)) have been investigated to address this challenge. Here
Simone Bertolazzi et al.
ACS nano, 5(12), 9703-9709 (2011-11-18)
We report on measurements of the stiffness and breaking strength of monolayer MoS(2), a new semiconducting analogue of graphene. Single and bilayer MoS(2) is exfoliated from bulk and transferred to a substrate containing an array of microfabricated circular holes. The
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