202894
Cadmium oxide
≥99.99% trace metals basis
Synonym(s):
Cadmia
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About This Item
Linear Formula:
CdO
CAS Number:
Molecular Weight:
128.41
PubChem Substance ID:
eCl@ss:
38150602
UNSPSC Code:
12352303
NACRES:
NA.23
EC Number:
215-146-2
MDL number:
assay
≥99.99% trace metals basis
form
powder
reaction suitability
reagent type: catalyst
core: cadmium
density
8.15 g/mL at 25 °C (lit.)
SMILES string
O=[Cd]
InChI
1S/Cd.O
InChI key
CXKCTMHTOKXKQT-UHFFFAOYSA-N
General description
Cadmium oxide (CdO) is a semiconducting material with high conductivity which isoptically transparent in the electromagnetic spectra. It has a direct bandgap of 2.28 eV and can form a single crystal material by metal organic vapor phase epitaxy (MOVPE) growth.
Application
CdO can be used in the synthesis of cadmium selenide quantum dots for potential applications in photocatalysis. It is used as a transparent conducting oxide (TCO) which can further be used in a variety of opto-electronic devices.
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Danger
Hazard Classifications
Acute Tox. 2 Inhalation - Aquatic Acute 1 - Aquatic Chronic 1 - Carc. 1B - Muta. 2 - Repr. 2 - STOT RE 1
Storage Class
6.1A - Combustible acute toxic Cat. 1 and 2 / very toxic hazardous materials
wgk
WGK 3
ppe
dust mask type N95 (US), Eyeshields, Faceshields, Gloves, type P2 (EN 143) respirator cartridges
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Yi-An Chen et al.
Nanomaterials (Basel, Switzerland), 9(7) (2019-08-03)
To the best of our knowledge, this report presents, for the first time, the schematic of the possible chemical reaction for a one-pot synthesis of Zn0.5Cd0.5Se alloy quantum dots (QDs) in the presence of low/high oleylamine (OLA) contents. For high
Electrical and optical properties of Al doped cadmium oxide thin films deposited by radio frequency magnetron sputtering
Saha B, et al.
Solar Energy Materials and Solar Cells, 91(18), 1692-1697 (2007)
Sachidananda Krishnamurthy et al.
ACS nano, 15(1), 575-587 (2021-01-01)
We synthesized PbS/CdS core/shell quantum dots (QDs) to have functional single-emitter properties for room-temperature, solid-state operation in the telecom O and S bands. Two shell-growth methods-cation exchange and successive ionic layer adsorption and reaction (SILAR)-were employed to prepare QD heterostructures