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Merck

216011

Ammonium fluoride

ACS reagent, ≥98.0%

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About This Item

Linear Formula:
NH4F
CAS Number:
12125-01-8
Molecular Weight:
37.04
PubChem Substance ID:
329752182
eCl@ss:
38050106
UNSPSC Code:
12352300
NACRES:
NA.21
EC Number:
235-185-9
MDL number:
MFCD00011423
assay:
≥98.0%
grade:
ACS reagent
form:
crystals, granules or chunks

Product Name

Ammonium fluoride, ACS reagent, ≥98.0%

InChI key

LDDQLRUQCUTJBB-UHFFFAOYSA-N

InChI

1S/FH.H3N/h1H;1H3

SMILES string

N.F

grade

ACS reagent

assay

≥98.0%

form

crystals, granules or chunks

impurities

≤0.005% insolubles

ign. residue

≤0.01%

pH

~6 (20 °C)

anion traces

chloride (Cl-): ≤0.001%
sulfate (SO42-): ≤0.005%

cation traces

Fe: ≤5 ppm
heavy metals (as Pb): ≤5 ppm

Quality Level

200

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Application

Employed in a new hydrothermal synthesis of complex flourides NaHoF4 and NaEuF4 these interesting compounds have the fluorite structure and are important for solid-state lasers as well as for photoluminescence and magnetic characteristics.

pictograms

Skull and crossbones
GHS06

signalword

Danger

Hazard Classifications

Acute Tox. 3 Dermal - Acute Tox. 3 Inhalation - Acute Tox. 3 Oral

Storage Class

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

wgk

WGK 1

flash_point_f

does not flash

flash_point_c

does not flash

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Certificates of Analysis (COA)

Lot/Batch Number
BCCN3761
BCCN3762
BCCM2735
BCCM0523
BCCK4955

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Phase transition in ammonium fluoride.
Stevenson R.
J. Chem. Phys. , 34(1), 346-347 (1961)
Self-organized TiO2 nanotubes prepared in ammonium fluoride containing acetic acid electrolytes.
Tsuchiya H, et al.
Electrochemical Communications, 7(6), 576-580 (2005)
On the Etching of Silicon by Oxidants in Ammonium Fluoride Solutions A Mechanistic Study.
Gerischer H and Lubke M.
Journal of the Electrochemical Society, 135(11), 2782-2786 (1988)
Surface analysis of the electropolishing layer on Si (111) in ammonium fluoride solution.
Lewerenz HJ, et al.
Electrochimica Acta, 45(28), 4615-4627 (2000)
Jae Hoon Bong et al.
Nanoscale, 6(15), 8503-8508 (2014-06-21)
We report a post-synthetic n-doping method for chemical-vapor-deposition (CVD) grown graphene using wet chemical processing. An ammonium fluoride solution was found effective in converting pristine hole doping into electron doping in addition to the mobility improvement of charge carriers. We
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