647802
Silicon
wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 3 in. × 0.5 mm
Sinónimos:
Silicon element
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Fórmula lineal:
Si
Número CAS:
Peso molecular:
28.09
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352300
MDL number:
Servicio técnico
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Permítanos ayudarleQuality Level
form
crystalline (cubic (a = 5.4037)), wafer (single side polished)
contains
phosphorus as dopant
greener alternative product characteristics
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diam. × thickness
3 in. × 0.5 mm
bp
2355 °C (lit.)
mp
1240 °C, 1410 °C (lit.)
density
2.33 g/mL at 25 °C (lit.)
greener alternative category
semiconductor properties
<100>, N-type
SMILES string
[Si]
InChI
1S/Si
InChI key
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
General description
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-1 Ωcm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″
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wgk
nwg
ppe
Eyeshields, Gloves, type N95 (US)
Clase de almacenamiento
11 - Combustible Solids
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Mesoporous Si-C-O fibers were fabricated by air activation of a kind of carbon-rich SiC-C fibers at 600 degrees C. The SiC-C fibers were prepared from the hybrid precursor of polycarbosilane and pitch through melt-spinning, air curing and pyrolysis in nitrogen.
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