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About This Item
InChI key
XCZXGTMEAKBVPV-UHFFFAOYSA-N
InChI
1S/3CH3.Ga/h3*1H3;
SMILES string
C[Ga](C)C
Quality Level
form
liquid
reaction suitability
core: gallium
bp
92.5 °C/760 mmHg (lit.)
mp
-15.8 °C (lit.)
density
1.132 g/mL at 25 °C
Related Categories
General description
Application
- A precursor to synthesize β-gallium oxide (β-Ga₂O₃) thin films for high-power electronic devices, offering superior breakdown voltage and thermal stability.
- A precursor for epitaxial growth of gallium nitride (GaN) in blue LEDs and laser diodes, enabling high-brightness displays and optical communication systems.
- A component in colloidal quantum dot synthesis for tunable near-infrared LEDs in biomedical imaging and telecommunications.
- A source material for gallium arsenide (GaAs) layers in high-electron-mobility transistors (HEMTs), critical for 5G millimeter-wave amplifiers.
signalword
Danger
hcodes
supp_hazards
Storage Class
4.2 - Pyrophoric and self-heating hazardous materials
wgk
WGK 3
Hazard Classifications
Eye Dam. 1 - Pyr. Liq. 1 - Skin Corr. 1B - Water-react. 1
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