description
Band gap: 1.9 eV
form
solid
mol wt
average Mw 100,000-140,000
loss
0.5 wt. % TGA, 409 °C
mp
270-300 °C
transition temp
Tm >400 °C
λmax
576 nm
orbital energy
HOMO -5.5 eV , LUMO -3.6 eV
OPV device performance
ITO/MoO3-Al/PCDTBT:PC71BM/MoO3/Al
, ITO/PEDOT:PSS/PCDTBT:PC71BM (1:4)/TiOxAl
, ITO/PEDOT:PSS/PCDTBT:PC71BM/Al
semiconductor properties
P-type (mobility=6×10−5 cm2/V·s)
General description
Application
保管分類
11 - Combustible Solids
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable