553468
Tris(tert-butoxy)silanol
99.999%
동의어(들):
TBS
조직 및 계약 가격을 보려면 로그인를 클릭합니다.
크기 선택
보기 변경
제품정보 (DICE 배송 시 비용 별도)
Linear Formula:
((CH3)3CO)3SiOH
CAS 번호:
Molecular Weight:
264.43
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352103
MDL number:
assay
99.999%
form
solid
bp
205-210 °C (lit.)
mp
63-65 °C (lit.)
SMILES string
CC(C)(C)O[Si](O)(OC(C)(C)C)OC(C)(C)C
InChI
1S/C12H28O4Si/c1-10(2,3)14-17(13,15-11(4,5)6)16-12(7,8)9/h13H,1-9H3
InChI key
HLDBBQREZCVBMA-UHFFFAOYSA-N
General description
Tris(tert-butoxy)silanol can react with various metal alkyl amides to act as precursors for vapor deposition metal silicates. It also acts as a suitable precursor for deposition of silica.
Application
Tris(tert-alkoxy)silanols reacts with tetrakis(dimethylamino)-hafnium vapor(Hf(N(CH3)2)4) for vapor phase deposition of hafnium silicate glass films. Tris(tert-butoxy)silanol is used for atomic layer deposition (ALD) of highly conformal layers of amorphous silicon dioxide and aluminum oxide nanolaminates.
저장 등급
11 - Combustible Solids
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Eyeshields, Gloves, type N95 (US)
문서
atomic layer deposition (ALD), microelectronics, Mo:Al2O3 films, nanocomposite coating, photovoltaics, semiconductor devices, W:Al2O3 films, composite films, layer-by-layer
Hybrid organic-inorganic sol-gel materials containing silica were first called “ORMOSILs” in 1984.
Spintronics offer breakthroughs over conventional memory/logic devices with lower power, leakage, saturation, and complexity.
Vapor deposition of metal oxides and silicates: Possible gate insulators for future microelectronics.
Gordon G, et al.
Chemistry of Materials, 13(8), 2463-2464 (2001)
Rapid SiO2 Atomic Layer Deposition Using Tris(tert-pentoxy)silanol.
Burton B, et al.
Chemistry of Materials, 20, 7031-7043 (2008)
Rapid vapor deposition of highly conformal silica nanolaminates.
Hausmann D, et al.
Science, 298(5592), 402-406 null