ビス(メチル-η⁵_-シクロペンタジエニル)メトキシメチルジルコニウム

We are committed to bringing you Greener Alternative Products, which adhere to one of the four categories of Greener Alternatives. This is an enabling product and can be used as a precursor for atomic layer deposition, enabling the fabrication of energy harvesting and storage devices. Click here for more information.

Atomic number of base material: 40 Zirconium

Advanced precursor for atomic layer deposition of ZrO₂ thin films. Hafnium and zirconium oxides are leading candidates to replace silicion dioxide as the gate oxide in a variety of semiconductor and energy applications. Excellent properties of HfO₂ and ZrO₂ films make them especially attractive for gate oxide replacement and as potential insulating dielectrics for capacitive elements in memory devices such as DRAM.

400°Cまで自己極限成長を示す広い温度範囲全体でのALD(原子層堆積)成長過程で様々な酸化剤と混合可能です。前駆物質の揮発性と熱安定特性により、材料を気泡液位計から従来の蒸着器具に容易に輸送できるようになります。

Packaged in stainless steel cylinders compatible with conventional deposition systems. Precursors may be used in liquid injection systems as dilute solutions and in combination with a variety of other sources to deposit mixed oxides.