244651
Tin(IV) oxide
−325 mesh, 99.9% trace metals basis
Sinónimos:
Stannic dioxide, Tin dioxide, Stannic oxide
Iniciar sesión para ver los precios por organización y contrato.
Seleccione un Tamaño
Acerca de este artículo
Fórmula lineal:
SnO2
Número CAS:
Peso molecular:
150.71
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352303
EC Number:
242-159-0
MDL number:
Servicio técnico
¿Necesita ayuda? Nuestro equipo de científicos experimentados está aquí para ayudarle.
Permítanos ayudarleServicio técnico
¿Necesita ayuda? Nuestro equipo de científicos experimentados está aquí para ayudarle.
Permítanos ayudarleInChI key
XOLBLPGZBRYERU-UHFFFAOYSA-N
InChI
1S/2O.Sn
SMILES string
O=[Sn]=O
assay
99.9% trace metals basis
form
powder
greener alternative product characteristics
Design for Energy Efficiency
Learn more about the Principles of Green Chemistry.
sustainability
Greener Alternative Product
particle size
−325 mesh
density
6.95 g/mL at 25 °C (lit.)
application(s)
battery manufacturing
greener alternative category
Quality Level
¿Está buscando productos similares? Visita Guía de comparación de productos
Categorías relacionadas
General description
Tin(IV) oxide (SnO2) is an n-type wide band gap semiconductor with high transmittance at nearIR and visible region. It is scratch resistant and chemically inert.
We are committed to bringing you Greener Alternative Products, which belong to one of the four categories of greener alternatives. Tin oxide enhances lithium-ion batteries with high energy density, improved cycling stability, and efficient charge/discharge rates, supporting more sustainable energy storage. Click here for more information.
Application
Tin(IV) oxide has been used to prepare thin films of TiO2-doped SnO2 oxide nanocomposites.
It can be used as astarting material to prepare niobium and zinc-doped titanium-tin-oxidesolid-solution ceramics, which are applicable in the field of electronicdevices.
It can be used as astarting material to prepare niobium and zinc-doped titanium-tin-oxidesolid-solution ceramics, which are applicable in the field of electronicdevices.
wgk
nwg
Clase de almacenamiento
11 - Combustible Solids
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Eyeshields, Gloves, type N95 (US)
Elija entre una de las versiones más recientes:
¿Ya tiene este producto?
Encuentre la documentación para los productos que ha comprado recientemente en la Biblioteca de documentos.
Dawei Su et al.
Chemical communications (Cambridge, England), 49(30), 3131-3133 (2013-03-13)
An in situ hydrothermal synthesis approach has been developed to prepare SnO2@graphene nanocomposites. The nanocomposites exhibited a high reversible sodium storage capacity of above 700 mA h g(-1) and excellent cyclability for Na-ion batteries. In particular, they also demonstrated a
Li-Ping Li et al.
Chemical communications (Cambridge, England), 49(17), 1762-1764 (2013-01-25)
ZnSn(OH)(6) and binary-component SnO(2)-ZnSn(OH)(6) were introduced as affinity probes for phosphopeptide enrichment for the first time. Two strategies, either ZnSn(OH)(6) and SnO(2) serial enrichment or binary-component SnO(2)-ZnSn(OH)(6) enrichment in a single run, were proposed to enhance multi-phosphopeptide enrichment and to
Ilsun Yoon et al.
Nanoscale, 5(2), 552-555 (2012-12-13)
Here we demonstrate a facile method of quantifying the decaying optical field surrounding free-standing tin dioxide (SnO(2)) nanofiber waveguides. Through the use of thin self-assembled polyelectrolyte coatings and fluorescent optical transmitters we map out the optical intensity as a function
Hui Song et al.
Nanoscale, 5(3), 1188-1194 (2013-01-10)
One-dimensional (1-D) SnO(2) nanorods (NRs) with a rutile structure are grown on various substrates regardless of the lattice-mismatch by using a new nutrient solution based on tin oxalate, which generated supersaturated Sn(2+) sources. These affluent sources are appropriate for producing
Jaewon Jang et al.
Advanced materials (Deerfield Beach, Fla.), 25(7), 1042-1047 (2012-11-20)
This work employs novel SnO(2) gel-like precursors in conjunction with sol-gel deposited ZrO(2) gate dielectrics to realize high-performance transparent transistors. Representative devices show excellent performance and transparency, and deliver mobility of 103 cm(2) V(-1) s(-1) in saturation at operation voltages
Nuestro equipo de científicos tiene experiencia en todas las áreas de investigación: Ciencias de la vida, Ciencia de los materiales, Síntesis química, Cromatografía, Analítica y muchas otras.
Póngase en contacto con el Servicio técnico