266418
Tellurium
powder, −200 mesh, 99.8% trace metals basis
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Fórmula empírica (notación de Hill):
Te
Número CAS:
Peso molecular:
127.60
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12141913
EC Number:
236-813-4
MDL number:
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99.8% trace metals basis
form
powder
composition
Te
resistivity
5.8-33 μΩ-cm, 20°C
particle size
−200 mesh
bp
990 °C (lit.)
mp
450 °C (lit.)
density
6.24 g/mL at 25 °C (lit.)
SMILES string
[Te]
InChI
1S/Te
InChI key
PORWMNRCUJJQNO-UHFFFAOYSA-N
General description
Tellurium is anon-radioactive and heaviest member of the chalcogen family. It has a widerange of oxidation states, from -2 to +6. It is widely used in the fields ofmetallurgy and electronics.
Application
Tellurium can be used as a precursor to prepare:
- Tellurium-based nanomaterials for semiconductor application, such as CdTe nanoparticles via solvothermal synthesis.
- Quantum dot solutions for fluorometric determination of bioactive compounds.
- Thermoelectricmaterials, such as Cu4Mn2Te4 by the melting-quenching-SPS method.
Tellurium, in combination with potassium hydroxide, mediates the quantitative pinacolization of aromatic carbonyl compounds.
signalword
Danger
Hazard Classifications
Acute Tox. 4 Inhalation - Aquatic Chronic 4 - Lact. - Repr. 1B - Skin Sens. 1B
Clase de almacenamiento
6.1D - Non-combustible acute toxic Cat.3 / toxic hazardous materials or hazardous materials causing chronic effects
wgk
WGK 2
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Eyeshields, Faceshields, Gloves, type P2 (EN 143) respirator cartridges
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Khan, R.H. et al.
Synthetic Communications, 27, 2193-2193 (1997)
Guizhong Wang et al.
Optics express, 21(4), 4703-4708 (2013-03-14)
The octave-spanning spectrum was generated in a tellurite glass based microstructured fiber pumped by a 528 MHz repetition rate Yb:fiber ring laser without amplification. The laser achieved 40% output optical-to-optical efficiency with the output power of 410 mW. By adjusting
Zhe Liu et al.
Optics express, 21(6), 7799-7810 (2013-04-03)
ZnTe is an important p-type semiconductor with great applications as field-effect transistors and photodetectors. In this paper, individual ZnTe nanowires based field-effect transistors was fabricated, showing evident p-type conductivity with an effect mobility of 11.3 cm(2)/Vs. Single ZnTe nanowire based