357391
Silicon carbide
−400 mesh particle size, ≥97.5%
Sinónimos:
Carbon silicide, Carborundum, Methanidylidynesilanylium, Silicon monocarbide
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Fórmula lineal:
SiC
Número CAS:
Peso molecular:
40.10
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352300
EC Number:
206-991-8
MDL number:
Servicio técnico
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hexagonal phase
Quality Level
assay
≥97.5%
form
powder
composition
CSi
reaction suitability
core: silicon
greener alternative product characteristics
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particle size
−400 mesh
mp
2700 °C (lit.)
density
3.22 g/mL at 25 °C (lit.)
greener alternative category
SMILES string
[C-]#[Si+]
InChI
1S/CSi/c1-2
InChI key
HBMJWWWQQXIZIP-UHFFFAOYSA-N
General description
Silicon carbide (SiC) is a semiconducting material with closed packed stacking of double layers of silicon and carbon. It has excellent thermo-mechanical and electrical properties that make it useful in a variety of electronic and optoelectronic applications.
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Application
SiC is majorly used as a base material for applications such as micro-structures, opto-electronic devices (light emitting diodes (LEDs), UV detectors), high temperature electronics (nuclear electronics), and high frequency devices.
Clase de almacenamiento
11 - Combustible Solids
wgk
nwg
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
dust mask type N95 (US), Eyeshields, Gloves
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Fundamentals of silicon carbide technology: growth, characterization, devices and applications
Fundamentals of silicon carbide technology: growth, characterization, devices and applications (2014)
Emanuele Rizzuto et al.
Sensors (Basel, Switzerland), 19(23) (2019-11-27)
In this paper, the characterization of the main techniques and transducers employed to measure local and global strains induced by uniaxial loading of murine tibiae is presented. Micro strain gauges and digital image correlation (DIC) were tested to measure local
Development of SiC-Si composites with fine-grained SiC microstructures
Wilhelm M, et al.
J. Eur. Ceram. Soc., 19(12), 2155-2163 (1999)